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Home > Fairchild Semiconductor > FET > NDS351AN

NDS351AN: N-Channel, Logic Level, PowerTrench® MOSFET

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

NDS351AN Datasheet
Features
  • 1.4A, 30 V
  • RDS(ON) = 160 mΩ @ VGS = 10 V
  • RDS(ON) = 250 mΩ @ VGS = 4.5 V
  • Ultra-Low gate charge
  • Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities
  • High performance trench technology for extremelylow RDS(ON)
Ordering Code
ProductProduct & Eco StatusUnit Price/1K OrderPacking Method ConventionPackage Marking Convention*
NDS351ANFull Production Green as of Dec 2011  China RoHS$0.0887SSOT 3L  -  1.12 x 2.92 x 1.4mm,  TAPE REEL
  • SSOT 3L  Drawing Last Update: May 2015
  • SOT Tape and Reel Packing Drawing Last Update: Oct 2016
Line 1&E (Space)
&Y (Binary Calendar Year Coding)

Line 2351A&G (Weekly Date Code)

Application Notes
  • AN-4163 Shielded Gate PowerTrench® MOSFET Datasheet Explanation Last Update : 23-Oct-2014
  • AN-9034 Power MOSFET Avalanche Guideline Last Update : 05-Mar-2011
  • AN-7510 A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options Last Update : 05-Mar-2011
  • AN-9010 MOSFET Basics Last Update : 09-Sep-2013
  • AN-9065 FRFET® in Synchronous Rectification Last Update : 28-Jun-2014
  • AN-7515 A Combined Single-Pulse and Repetitive UIS Rating System Last Update : 03-Mar-2011
  • AN-7533 A Revised MOSFET Model With Dynamic Temperature Compensation Last Update : 05-Mar-2011
  • AN-558 Introduction to Power MOSFETs and their Applications Last Update : 29-Mar-2016
  • AN-9005 Driving and Layout Design for Fast Switching Super-Junction MOSFETs Last Update : 26-Nov-2014
  • NDS351AN.pdf
    Power MOSFET Avalanche Guideline Last Update : 05-Mar-2011
    MOSFET Basics Last Update : 09-Sep-2013
    A Combined Single-Pulse and Repetitive UIS Rating System Last Update : 03-Mar-2011
    FRFET® in Synchronous Rectification Last Update : 28-Jun-2014
    Driving and Layout Design for Fast Switching Super-Junction MOSFETs Last Update : 26-Nov-2014
    SSOT 3L  Drawing Last Update: May 2015
    SOT Tape and Reel Packing Drawing Last Update: Oct 2016
    Shielded Gate PowerTrench® MOSFET Datasheet Explanation Last Update : 23-Oct-2014
    A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options Last Update : 05-Mar-2011
    A Revised MOSFET Model With Dynamic Temperature Compensation Last Update : 05-Mar-2011
    Introduction to Power MOSFETs and their Applications Last Update : 29-Mar-2016
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