NDS356AP: -30V P-Channel Logic Level Enhancement Mode Field Effect Transistor

SuperSOT™-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.

Features

• -1.1 A, -30 V
  
  • RDS(ON) = 0.3 W Ω VGS=-4.5 V
  • RDS(ON) = 0.2 W Ω VGS=-10 V
• R_DS(ON) = 0.3 W Ω V_GS=-4.5 V
  
• R_DS(ON) = 0.2 W Ω V_GS=-10 V
  
• Industry standard outline SOT-23 surface mount packageusing proprietary SuperSOT™-3 design for superiorthermal and electrical capabilities.
  
• High density cell design for extremely low R_DS(ON).
  
• Exceptional on-resistance and maximum DC currentcapability.
  

Application Notes