NDS8425: Single N-Channel 2.5V Specified PowerTrench® MOSFET

This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint package.

Features

• 7.4 A, 20 V
• R_DS(ON) = 0.022 Ω @ V_GS= 4.5 V
• R_DS(ON) = 0.028 Ω @ V_GS= 2.7V
• Fast switching speed
• Low gate charge (11nC typical)
• High performance trench technology for extremely lowR_DS(ON)
• High power and current handling capability in a widelyused surface mount package

Application Notes