NDS9948: Dual P-Channel PowerTrench® MOSFET

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V - 20V).

Features

• -2.3A, -60V
• R_DS(ON) = 250 mΩ @ V_GS = -10V
• R_DS(ON) = 500 mΩ @ V_GS = -4.5V
• Low gate charge (9nC typical)
• Fast switching speed
• High performance trench technology for extremelylow R_DS(ON)
• High power and current handling capability

Application Notes