RFD3055LESM: N-Channel Logic Level Power MOSFET 60V, 11A, 107mΩ

These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49158.

Features

• 11A, 60V
• r_DS(ON)= 0.107Ω
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
• TB334 “Guidelines for Soldering Surface MountComponents to PC Boards”

Application Notes