SI4435DY: 30V P-Channel PowerTrench® MOSFET

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V - 25V).

Features

• -8.8 A, -30 V R_DS(ON) = 20 mΩ @ VGS = -10 V
  R_DS(ON) = 35 mΩ @ VGS = -4.5 V
  
• Low gate charge (17nC typical)
  
• Fast switching speed
  
• High performance trench technology for extremely low R_DS(ON)
  
• High power and current handling capability
  

Application Notes