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Fairchild Semiconductor
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Bipolar Transistors
> TIP112
TIP112: NPN Epitaxial Silicon Darlington Transistor
TIP112 Datasheet
Features
Monolithic Construction with Built In Base-Emitter Shunt Resistors
Complementary to TIP115/116/117
High DC Current Gain: h
FE
=1000 @ V
CE
= 4 V, I
C
= 1 A (Min.)
Low Collector-Emitter Saturation Voltage
Industrial Use
Ordering Code
Product
Product & Eco Status
Unit Price/1K Order
Packing Method Convention
Package Marking Convention*
TIP112
Full Production ROHS Compliant as of 27-Feb-2006 China RoHS
$0.2728
TO-220 3L - 4.83 x 10.16 x 8.89mm, BULK
TO-220 3L Drawing
Last Update: Nov 2015
TO220-3L, JEDEC VARIATION, PACKING DRAWING
Last Update: Oct 2013
TO Tube Packing Drawing
Last Update: Sep 2015
TO Vacuum Packing Drawing
Last Update: Sep 2015
Line 1
$Y
(Fairchild logo)
Line 2
&3
(3-Digit Date Code)
&K
Line 3
TIP112
TIP112TU
Full Production ROHS Compliant as of 27-Feb-2006 China RoHS
$0.2728
TO-220 3L - 4.83 x 10.16 x 8.89mm, RAIL
TO-220 3L Drawing
Last Update: Nov 2015
TO220-3L, JEDEC VARIATION, PACKING DRAWING
Last Update: Oct 2013
TO Tube Packing Drawing
Last Update: Sep 2015
TO Vacuum Packing Drawing
Last Update: Sep 2015
Line 1
$Y
(Fairchild logo)
Line 2
&3
(3-Digit Date Code)
&K
Line 3
TIP112
TIP112.pdf
TO-220 3L Drawing
Last Update: Nov 2015
TO220-3L, JEDEC VARIATION, PACKING DRAWING
Last Update: Oct 2013
TO Tube Packing Drawing
Last Update: Sep 2015
TO Vacuum Packing Drawing
Last Update: Sep 2015
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