BFP740F

ParametricBFP740F
VCEO  max4.0V
IC  max45.0mA
NF0.5dB
Gmax27.5dB
OIP325.0dBm
OP1dB11.0dBm
PackageTSFP-4
Sales Product NameBFP740F
OPNBFP740FH6327XTSA1
Product Statusactive and preferred
Package NamePG-TSFP-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size3000
Packing TypeTAPE & REEL
Summary of Features:
  • High gain ultra low noise RF transistor
  • Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more
  • Ideal for CDMA and WLAN applications
  • Outstanding noise figure F = 0.5 dB at 1.8 GHz, Outstanding noise figure F = 0.75 dB at 6 GHz
  • High maximum stable gain :Gms = 27.5 dB at 1.8 GHz
  • Gold metallization for extra high reliability
  • 150 GHz fT-Silicon Germanium technology
  • Pb-free (RoHS compliant) package1)
  • Qualified according AEC Q101
Data Sheet
TitleSizeDateVersion
BFP740F,EN1.5 MB12 Mar 201502_00
Application Notes
TitleSizeDateVersion
AN117 - Low Noise Amplifier (LNA) for 1575 MHz Global Positioning System (GPS) Applications using the Ultra-Low Noise Silicon-Germanium BFP740F Transistor in TSFP-4 package.911 KB08 Dec 2009
AN118 - BFP740F Ultra-Low-Noise Silicon-Germanium Transistor as 5 – 6 GHz Low Noise Amplifier (LNA).1 MB08 Dec 2009
AN120 - 1.8 Volt Low Noise Amplifier (LNA) for 1575 MHz Global Positioning System (GPS) Applications using the Silicon-Germanium: Carbon BFP740F Heterojunction Bipolar Transistor in TSFP-4 package.1.1 MB08 Dec 2009
AN122 - InfineonsS BFP740F Ultra Low Noise RF Transistor in 2.33 GHz SDARS Low Noise Amplifier (LNA) Application. Rev. B.1 MB08 Dec 2009
AN168 - BFP740F SiGe:C Ultra Low Noise RF Transistor in 5 – 6 GHz LNA Application with 16 dB Gain, 1.3 dB Noise Figure & 1 microsecond Turn-On / Turn-Off Time1.5 MB17 Nov 2008
AN171- BFP740F SiGe:C Ultra Low Noise RF Transistor in 2.4 – 2.5 GHz LNA Application with 17 dB Gain, 0.7 dB Noise Figure & < 1 microsecond Turn-On / Turn-Off Time1.8 MB26 Jan 2009
TR129 - BFP740F WLAN LNA up to 6GHz536 KB18 Dec 2009
Product Brief
TitleSizeDateVersion
Infineon-RF Transistors 7th Generation-PB-v01_00-CN；CN580 KB15 May 201601_01
Infineon-RF Transistors 7th Generation-PB-v01_00-EN；EN299 KB15 Jun 201601_01
Material Content SheetInfo
TitleSizeDateVersion
MCDS_2016-03-17_02-51-46_MA000895786_PG-TSFP-4-1.pdf；EN27 KB17 Mar 201602_00
PCB Design Data
TitleSizeDateVersion
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Altium - v1.01 MB22 Oct 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Cadence - v1.0139 KB22 Oct 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Eagle - v1.027 KB22 Oct 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Mentor - v1.0176 KB22 Oct 201301_00
Evaluation Boards
BoardFamilyDescriptionStatus
BFP640ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP640ESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP740 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP740 is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP740ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP740ESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP740FESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP740FESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP840ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP840ESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board.on request
BOARD BFP840FESDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP840FESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board.on request
BFP842ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP842ESD is a hetero-junction bipolar transistor specifically designed for 2.3 - 3.5 GHz LNA applications. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP843 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP843 is a robust low noise broadband pre-matched bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.
BFR840L3RHESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFR840L3RHESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board.on request
BFR843EL3 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFR843EL3 is a robust low noise broadband pre-matched bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP640 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP640 is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
Simulation Models
TitleSizeDateVersion
Infineon-RFTransistor-AWR-MWO-Design-Kit-SM-v02_00-EN；EN21.4 MB11 Dec 201502_00
Simulation Data
TitleSizeDateVersion
BFP740F573 KB05 Dec 2012
Package Data
TitleSizeDateVersion
PG-TSFP-4-1 | BFP740FH6327XTSA1；EN491 KB11 Apr 201601_00
PCB Design Data
TitleSizeDateVersion
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Altium - v1.01 MB22 Oct 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Cadence - v1.0139 KB22 Oct 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Eagle - v1.027 KB22 Oct 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Mentor - v1.0176 KB22 Oct 201301_00
EN BFP740F
AN117 - Low Noise Amplifier (LNA) for 1575 MHz Global Positioning System (GPS) Applications using the Ultra-Low Noise Silicon-Ge BFP740F
AN118 - BFP740F Ultra-Low-Noise Silicon-Germanium Transistor as 5 – 6 GHz Low Noise Amplifier (LNA). BFP740F
AN120 - 1.8 Volt Low Noise Amplifier (LNA) for 1575 MHz Global Positioning System (GPS) Applications using the Silicon-Germanium BFP740F
AN122 - InfineonsS BFP740F Ultra Low Noise RF Transistor in 2.33 GHz SDARS Low Noise Amplifier (LNA) Application. Rev. B. BFP740F
AN168 - BFP740F SiGe:C Ultra Low Noise RF Transistor in 5 – 6 GHz LNA Application with 16 dB Gain, 1.3 dB Noise Figure & 1 micro BFP740F
AN171- BFP740F SiGe:C Ultra Low Noise RF Transistor in 2.4 – 2.5 GHz LNA Application with 17 dB Gain, 0.7 dB Noise Figure & < 1 BFP740F
TR129 - BFP740F WLAN LNA up to 6GHz BFP740F
CN BFP760
EN BFR740L3RH
EN BFP740F
EN BFQ790
BFP740F BFP740F
EN BFP740F
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Altium - v1.0 BFR740L3RH
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Cadence - v1.0 BFR740L3RH
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Eagle - v1.0 BFR740L3RH
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Mentor - v1.0 BFR740L3RH
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