| Parametric | BFY193C (P) |
|---|
| VCEO
max | 12.0V |
|---|
| IC
max | 80.0mA |
|---|
| Ptot
max | 580.0mW |
|---|
| fT | 8.0GHz |
|---|
| RthJS
max | 165.0K/W |
|---|
| Sales Product Name | BFY193C (P) |
|---|
| OPN | |
|---|
| Product Status | active and preferred |
|---|
| Package Name | -- |
|---|
| Completely lead free | no |
|---|
| Halogen free | no |
|---|
| RoHS compliant | no |
|---|
| Packing Size | 1 |
|---|
| Packing Type | SINGLE BOX |
|---|
| |
|---|
| Summary of Features:- HiRel Discrete and Microwave Semiconductor
- For low noise, high-gain amplifiers up to 2GHz.
- For linear broadband amplifiers
- Specified 1/f Noise
- Hermetically sealed microwave package
- fT= 8 GHz
- F = 2.3 dB at 2 GHz
- Type Variant No. 08
Target Applications:- Quality level for Engineering Models
 |
