BGA729N6
BGA729N6 is a broadband low power low noise amplifier (LNA) MMIC for portable and mobile TV applications which covers a wide frequency range from 70 MHz to 1000 MHz. The LNA provides 16.3 dB gain and 1.1 dB noise figure at a current consumption of 6.0 mA in the application configuration. In bypass mode the LNA provides an insertion loss of -4.0dB. The BGA729N6 is based upon Infineon Technologies B7HF Silicon Germanium technology. It operates from 1.5 V to 3.3 V supply voltage.
Broadband Low Noise Amplifier for Portable and Mobile TV Applications.
| BGA729N6 | |
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| BGA729N6E6327XTSA1 | |
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| coming soon | |
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| PG-TSNP-6 | |
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| yes | |
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| yes | |
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| yes | |
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| 15000 | |
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| TAPE & REEL | |
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| 1 | |
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| Sales Product Name | BGA729N6 |
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| OPN | BGA729N6E6327XTSA1 |
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| Product Status | coming soon |
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| Package Name | PG-TSNP-6 |
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| Completely lead free | yes |
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| Halogen free | yes |
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| RoHS compliant | yes |
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| Packing Size | 15000 |
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| Packing Type | TAPE & REEL |
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| Moisture Level | 1 |
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| Summary of Features:- Insertion power gain: 16.3 dB
- Insertion Loss in bypass mode: -4.0 dB
- Low noise figure: 1.1 dB / 4.3 dB in high gain / bypass mode
- Low current consumption: 6.0 mA
- Power off function
- Operating frequency: 70 -1000 MHz
- Three-state control: OFF-, Bypass- and High gain-Mode
- Supply voltage: 1.5 V to 3.3 V
- Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2)
- B7HF Silicon Germanium technology
- No external matching inductor required
- RF input and output internally matched to 50 Ω
- Only 2 external SMD component necessary
- 2kV HBM ESD protection (including AI-pin)
- Pb-free (RoHS compliant) package
Summary of Features:- Insertion power gain: 16.3 dB
- Insertion Loss in bypass mode: -4.0 dB
- Low noise figure: 1.1 dB / 4.3 dB in high gain / bypass mode
- Low current consumption: 6.0 mA
- Power off function
- Operating frequency: 70 -1000 MHz
- Three-state control: OFF-, Bypass- and High gain-Mode
- Supply voltage: 1.5 V to 3.3 V
- Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2)
- B7HF Silicon Germanium technology
- No external matching inductor required
- RF input and output internally matched to 50 Ω
- Only 2 external SMD component necessary
- 2kV HBM ESD protection (including AI-pin)
- Pb-free (RoHS compliant) package
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Data Sheet
Package Data
