| Parametric | BTS282Z E3180A |
|---|
| Channels | 1.0 |
|---|
| VDS
max | 49.0V |
|---|
| ID | 52.0A |
|---|
| RDS (on)
max | 6.5mΩ |
|---|
| Ptot
max | 300.0mW |
|---|
| ton
max | 0.1µs |
|---|
| toff
max | 0.16µs |
|---|
| Operating Temperature
min
max | -40.0°C
175.0°C |
|---|
| Mounting | SMT |
|---|
| Sales Product Name | BTS282Z E3180A |
|---|
| OPN | BTS282ZE3180AATMA2 |
|---|
| Product Status | active and preferred |
|---|
| Package Name | PG-TO263-7 |
|---|
| Completely lead free | no |
|---|
| Halogen free | yes |
|---|
| RoHS compliant | yes |
|---|
| Packing Size | 1000 |
|---|
| Packing Type | TAPE & REEL |
|---|
| Moisture Level | 1 |
|---|
| Summary of Features:- N channel
- Enhancement mode
- Logic Level Input
- Analog driving possible
- Fast switching up to 1 MHz
- Potential-free temperature sensor with thyristor characteristics.
- Overtemperature protection
- Avalanche rated
- High current pinning
Target Applications:- MOSFET with temperature sensor
 |
