| Parametric | CFY67-08P (P) |
|---|
| IDS
max | 60.0mA |
|---|
| VDS
min | 3.5V |
|---|
| NF
(@12GHz) | 0.7dB |
|---|
| RthJS
max | 515.0K/W |
|---|
| Sales Product Name | CFY67-08P (P) |
|---|
| OPN | |
|---|
| Product Status | discontinued |
|---|
| Package Name | -- |
|---|
| Completely lead free | no |
|---|
| Halogen free | no |
|---|
| RoHS compliant | no |
|---|
| Packing Size | |
|---|
| Packing Type | |
|---|
| |
|---|
| Description:- HiRel Discrete and Microwave Semiconductor
- Pseudo-morphic AlGaAs/InGaAs/GaAs HEMT
Summary of Features:- For frequencies from 500 MHz to > 20 GHz
- Hermetically sealed microwave package
- Super low noise figure, high associated gain
Target Applications:- For high quality super low-noise amplifiers
- Quality level for Engineering Models
 |
