IDC08S120E
Emitter Controlled Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology.
| Parametric | IDC08S120E |
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| Technology | thinQ!™ SiC diode chips |
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| VDS
max | 1200.0V |
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| IF
max | 7.5A |
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| I(FSM)
max | 39.0A |
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| VF | 1.6V |
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| IR
max | 180.0µA |
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| Sales Product Name | IDC08S120E |
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| OPN | IDC08S120EX1SA3 |
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| Product Status | discontinued |
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| Package Name | -- |
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| Completely lead free | yes |
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| Halogen free | yes |
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| RoHS compliant | yes |
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| Packing Size | 1 |
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| Packing Type | WAFER SAWN |
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| Summary of Features:- Revolutionary semiconductor material - silicon carbide
- Switching behaviour benchmark
- No Reverse Recovery / no forward recovery
- Temperature independent switching behaviour
- Qualified according to JEDEC based on target applications
Target Applications: |
Data Sheet
