IDC08S60CE

Emitter Controlled Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology.

ParametricIDC08S60CE
TechnologythinQ!™ SiC diode chips
VDS  max600.0V
IF  max8.0A
I(FSM)  max59.0A
VF1.5V
IR  max100.0µA
Sales Product NameIDC08S60CE
OPNIDC08S60CEX1SA3
Product Statusdiscontinued
Package Name--
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size1
Packing TypeWAFER SAWN
Summary of Features:
  • Revolutionary semiconductor material - silicon carbide
  • Switching behaviour benchmark
  • No Reverse Recovery / no forward recovery
  • Temperature independent switching behaviour
  • Qualified according to JEDEC based on target applications
Target Applications:
  • SMPS
  • PFC
  • Snubber
Data Sheet
TitleSizeDateVersion
IDC08S60CE,EN58 KB05 Sep 201201_02
EN IDC08S60CE