IDM08G120C5
With CoolSiC™ Generation 5 Infineon presents a new leading edge technology for SiC Schottky Barrier diodes, delivering market leading efficiency, more system reliability at attractive cost point. Infineon’s thin wafer technology, already introduced with Generation 2, is now combined with a new, merged pn junction bringing improved conduction losses, thermal characteristics and surge capabilities. The result is a series of products delivering improved efficiency and reliability in PFC and Boost stages over all load conditions with respect to all previous CoolSiC™ generations.
| Parametric | IDM08G120C5 |
|---|
| VDC
min | 1200.0V |
|---|
| IF
max | 8.0A |
|---|
| VF | 1.65V |
|---|
| QC | 28.0nC |
|---|
| Package | DPAK (TO-252-2) |
|---|
| I(FSM)
max | 70.0A |
|---|
| IR | 3.0µA |
|---|
| Ptot
max | 167.0W |
|---|
| RthJC | 0.7K/W |
|---|
| Sales Product Name | IDM08G120C5 |
|---|
| OPN | IDM08G120C5XTMA1 |
|---|
| Product Status | active and preferred |
|---|
| Package Name | PG-TO252-2 |
|---|
| Completely lead free | yes |
|---|
| Halogen free | yes |
|---|
| RoHS compliant | yes |
|---|
| Packing Size | 2500 |
|---|
| Packing Type | TAPE & REEL |
|---|
| Moisture Level | 1 |
|---|
| Summary of Features:- Best-in-class forward voltage (V F)
- No reverse recovery charge
- Mild positive temperature dependency of V F
- Best-in-class surge current capability
- Excellent thermal performance
- Up to 40A rated diode
Benefits:- Highest system efficiency
- Improved system efficiency at low switching frequencies
- Increased power density at high switching frequencies
- Higher system reliability
- Reduced EMI
Target Applications:- Solar inverters
- UPS
- 3-phase SMPS
- Motor drives
|
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