IPB180N10S4-02

ParametricIPB180N10S4-02
RDS (on) (@10V)  max2.5mΩ
RDS (on)  max2.5mΩ
QG156.0nC
VDS  max100.0V
ID  max180.0A
RthJC  max0.5K/W
Ptot  max300.0W
IDpuls  max720.0A
VGS(th)  min  max2.0V  3.5V
Sales Product NameIPB180N10S4-02
OPNIPB180N10S402ATMA1
Product Statusactive and preferred
Package NamePG-TO263-7
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size1000
Packing TypeTAPE & REEL
Moisture Level1
Description:
  • N-channel - Enhancement mode
  • AEC qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green product (RoHS compliant)
  • 100% Avalanche tested
Data Sheet
TitleSizeDateVersion
IPB180N10S4-02 Data Sheet,EN205 KB28 Feb 201301_00
Product Brochure
TitleSizeDateVersion
Automotive MOSFETs Product BrochureEN3.5 MB26 May 201501_00
Application Notes
TitleSizeDateVersion
Repetitive Avalanche of Automotive MOSFETs3.7 MB03 Mar 201401_00
Application Brochure
TitleSizeDateVersion
Application Brochure - Infineon Solutions for TransportationEN6.9 MB01 Jun 201300_00
Product Selection Guide
TitleSizeDateVersion
Automotive Power Selection GuideEN10.6 MB19 Jan 201601_01
Material Content SheetInfo
TitleSizeDateVersion
MCDS_2013-08-29_07-38-51_MA001074084_PG-TO263-7-3.pdf24 KB31 Oct 201301_00
Simulation Models
TitleSizeDateVersion
OptiMOS-T2_100V_PSpiceEN68 KB28 Apr 201501_00
Package Data
TitleSizeDateVersion
PG-TO263-7-3 | IPB180N10S402ATMA1EN483 KB11 Apr 201601_00
EN IPB180N10S4-02
EN IPP80P03P4-05
Repetitive Avalanche of Automotive MOSFETs IPP80P03P4-05
EN power-stage-3x3-and-5x6
EN TLE8203E
MCDS_2013-08-29_07-38-51_MA001074084_PG-TO263-7-3.pdf IPB180N10S4-02
EN IPP120N10S4-05
EN IPB180N10S4-02