IPC045N25N3
With OptiMOS™ 200V and 250V Infineon continues to deliver Best-in-Class on-state resistance (R DS(on)) power MOSFETs with unique performance. The leading R DS(on) and Figure of Merit (FOM) characteristics reduce power losses, improve overall efficiency and increase power density. The 200V and 250V product families are optimized for applications such as Lighting for 110V AC networks, HID lamps, DC-DC converters and Power over Ethernet (PoE).
| Parametric | IPC045N25N3 |
|---|
| RDS (on) | 146.0mΩ |
|---|
| VGS(th)
min
max | 2.0V
4.0V |
|---|
| Technology | OptiMOS™ 3 |
|---|
| VDS | 250 V |
|---|
| Die Size
(X) | 1.8 mm |
|---|
| Die Size
(Y) | 2.5 mm |
|---|
| Die Size
(Area) | 4.5 mm² |
|---|
| Thickness | 250 |
|---|
| Mode | Enhancement |
|---|
| EAS/Avalanche Energy | 120.0mJ |
|---|
| Die Size
(-)
min
max | 1.8mm²
2.5mm² |
|---|
| Sales Product Name | IPC045N25N3 |
|---|
| OPN | IPC045N25N3X1SA1 |
|---|
| Product Status | active and preferred |
|---|
| Package Name | -- |
|---|
| Completely lead free | yes |
|---|
| Halogen free | yes |
|---|
| RoHS compliant | yes |
|---|
| Packing Size | 1 |
|---|
| Packing Type | WAFER SAWN |
|---|
| |
|---|
| Summary of Features:- Industry’s lowest R DS(on)
- Lowest Q g and Q gd
- World’s lowest FOM
Benefits:- Highest efficiency
- Highest power density
- Lowest board space consumption
- Less paralleling required
- System cost improvement
- Easy-to-design products
- Environmentally friendly
Target Applications:- Lighting for 110V AC networks
- Power over Ethernet (PoE)
- DC-DC for Telecom and Industrial application
- HID lamps
|
Data Sheet
Application Notes
Presentations
Product Selection Guide
