IPD5N25S3-430

ParametricIPD5N25S3-430
RDS (on) (@10V)  max430.0mΩ
QG1.5nC
VDS  max250.0V
ID  max5.0A
RthJC  max3.7K/W
Ptot  max41.0W
IDpuls  max20.0A
VGS(th)  min  max2.0V  4.0V
Sales Product NameIPD5N25S3-430
OPNIPD5N25S3430ATMA1
Product Statusactive and preferred
Package NamePG-TO252-3
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size2500
Packing TypeTAPE & REEL
Summary of Features:
  • N-channel - Enhancement mode
  • AEC qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Product (RoHS compliant)
  • 100% Avalanche tested
Benefits:
  • low RDS (on) in trench technology- down to 19.3 mOhm
  • highest current capability 64A
  • low switching and conduction power losses for high thermal efficiency
  • robust packages with superior quality and reliability
  • optimized total gate charge enables smaller driver output stages
Target Applications:
  • Hybrid inverter
  • DC/DC
  • Piezo Injection
Data Sheet
TitleSizeDateVersion
IPD5N25S3-430_DS_10,EN180 KB13 Dec 201201_00
Product Brochure
TitleSizeDateVersion
Automotive MOSFETs Product BrochureEN3.5 MB26 May 201501_00
Application Notes
TitleSizeDateVersion
Repetitive Avalanche of Automotive MOSFETs3.7 MB03 Mar 201401_00
Application Brochure
TitleSizeDateVersion
Application Brochure - Infineon Solutions for TransportationEN6.9 MB01 Jun 201300_00
Product Selection Guide
TitleSizeDateVersion
Automotive Power Selection GuideEN10.6 MB19 Jan 201601_01
Material Content SheetInfo
TitleSizeDateVersion
MCDS_2013-08-29_11-14-05_MA000921702_PG-TO252-3-313.pdf24 KB31 Oct 201301_00
Simulation Models
TitleSizeDateVersion
OptiMOS3_150V_200V_250V_PSpiceEN140 KB14 Mar 201601_00
Package Data
TitleSizeDateVersion
PG-TO252-3-313 | IPD5N25S3430ATMA1EN481 KB11 Apr 201601_00
EN IPD5N25S3-430
EN IPP80P03P4-05
Repetitive Avalanche of Automotive MOSFETs IPP80P03P4-05
EN power-stage-3x3-and-5x6
EN TLE8203E
MCDS_2013-08-29_11-14-05_MA000921702_PG-TO252-3-313.pdf IPD5N25S3-430
EN IPB17N25S3-100
EN IPD5N25S3-430