IPD60N10S4-12

ParametricIPD60N10S4-12
RDS (on) (@10V)  max12.2mΩ
QG34.0nC
VDS  max100.0V
ID  max60.0A
RthJC  max1.6K/W
Ptot  max94.0W
IDpuls  max240.0A
VGS(th)  min  max2.0V  3.5V
Sales Product NameIPD60N10S4-12
OPNIPD60N10S412ATMA1
Product Statusactive and preferred
Package NamePG-TO252-3
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size2500
Packing TypeTAPE & REEL
Moisture Level1
Summary of Features:
  • N-channel - Normal Level - Enhancement mode
  • AEC qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Product (RoHS compliant)
  • 100% Avalanche tested
Data Sheet
TitleSizeDateVersion
IPD60N10S4-12 Data sheet286 KB25 Aug 201401_00
Product Brochure
TitleSizeDateVersion
Automotive MOSFETs Product BrochureEN3.5 MB26 May 201501_00
Application Notes
TitleSizeDateVersion
Repetitive Avalanche of Automotive MOSFETs3.7 MB03 Mar 201401_00
Application Brochure
TitleSizeDateVersion
Application Brochure - Infineon Solutions for TransportationEN6.9 MB01 Jun 201300_00
Product Selection Guide
TitleSizeDateVersion
Automotive Power Selection GuideEN10.6 MB19 Jan 201601_01
Simulation Models
TitleSizeDateVersion
OptiMOS-T2_100V_PSpiceEN68 KB28 Apr 201501_00
Package Data
TitleSizeDateVersion
PG-TO252-3-313 | IPD60N10S412ATMA1EN484 KB11 Apr 201601_00
IPD60N10S4-12 Data sheet IPD60N10S4-12
EN IPP80P03P4-05
Repetitive Avalanche of Automotive MOSFETs IPP80P03P4-05
EN power-stage-3x3-and-5x6
EN TLE8203E
EN IPP120N10S4-05
EN IPD60N10S4-12