IPD70N10S3-12

ParametricIPD70N10S3-12
RDS (on) (@10V)  max11.1mΩ
RDS (on)  max11.1mΩ
QG51.0nC
VDS  max100.0V
ID  max70.0A
RthJC  max1.2K/W
Ptot  max125.0W
IDpuls  max280.0A
VGS(th)  min  max2.0V  4.0V
Sales Product NameIPD70N10S3-12
OPNIPD70N10S312ATMA1
Product Statusnot for new design
Package NamePG-TO252-3
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size2500
Packing TypeTAPE & REEL
Moisture Level1
Summary of Features:
  • N-channel - Enhancement mode
  • Automotive AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green product (RoHS compliant)
  • 100% Avalanche tested
Benefits:
  • highest current capability 180A
  • low switching and conduction power losses for high thermal efficiency
  • robust packages with superior quality and reliability
  • optimized total gate charge enables smaller driver output stages
Target Applications:
  • 48V inverter
  • 48V DC/DC
  • HID lighting
Data Sheet
TitleSizeDateVersion
IPD70N10S3-12_DS_1_1176 KB06 Oct 201101_01
Product Brochure
TitleSizeDateVersion
Automotive MOSFETs Product BrochureEN3.5 MB26 May 201501_00
Application Notes
TitleSizeDateVersion
Repetitive Avalanche of Automotive MOSFETs3.7 MB03 Mar 201401_00
Application Brochure
TitleSizeDateVersion
Application Brochure - Infineon Solutions for TransportationEN6.9 MB01 Jun 201300_00
Product Selection Guide
TitleSizeDateVersion
Automotive Power Selection GuideEN10.6 MB19 Jan 201601_01
Material Content SheetInfo
TitleSizeDateVersion
MCDS_2013-08-29_06-33-17_MA000427278_PG-TO252-3-11.pdf23 KB31 Oct 201301_00
Simulation Models
TitleSizeDateVersion
OptiMOS-T_100V_PSpice124 KB31 Jan 2008
Package Data
TitleSizeDateVersion
PG-TO252-3-11 | IPD70N10S312ATMA1EN463 KB11 Apr 201601_00
IPD70N10S3-12_DS_1_1 IPD70N10S3-12
EN IPP80P03P4-05
Repetitive Avalanche of Automotive MOSFETs IPP80P03P4-05
EN power-stage-3x3-and-5x6
EN TLE8203E
MCDS_2013-08-29_06-33-17_MA000427278_PG-TO252-3-11.pdf IPD70N10S3-12
OptiMOS-T_100V_PSpice IPP50N10S3L-16
EN IPD70N10S3-12