IPG20N10S4L-35

ParametricIPG20N10S4L-35
RDS (on) (@10V)  max35.0mΩ
RDS (on)  max35.0mΩ
RDS (on) (@4.5V)  max45.0mΩ
QG13.4nC
VDS  max100.0V
ID  max20.0A
RthJC  max3.5K/W
Ptot  max43.0W
IDpuls  max80.0A
VGS(th)  min  max1.1V  2.1V
Sales Product NameIPG20N10S4L-35
OPNIPG20N10S4L35ATMA1
Product Statusactive and preferred
Package NamePG-TDSON-8
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size5000
Packing TypeTAPE & REEL
Summary of Features:
  • Dual N-channel Logic Level - Enhancement mode
  • AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Product (RoHS compliant)
  • 100% Avalanche tested
Benefits:
  • Dual Super S08 can replace multiple DPAKs for significant PCB area savings and system level cost reduction.
  • Bond wire is 200um for up to 20A current
  • Larger source lead frame connection for wire bonding
  • Package: PG-TDSON-8-4
  • Same thermal and electrical performance as a DPAK with the same die size.
  • Exposed pad provides excellent thermal transfer (varies by die size)
  • Two N-Channel MOSFETs in one package with 2 isolated leadframes
Target Applications:
  • Direct Fuel Injection
  • Solenoid control
  • LED and Body lighting
Data Sheet
TitleSizeDateVersion
IPG20N10S4L-35 Data Sheet,EN143 KB16 May 201201_01
Product Brochure
TitleSizeDateVersion
Automotive MOSFETs Product BrochureEN3.5 MB26 May 201501_00
Application Notes
TitleSizeDateVersion
Repetitive Avalanche of Automotive MOSFETs3.7 MB03 Mar 201401_00
Application Brochure
TitleSizeDateVersion
Application Brochure - Infineon Solutions for TransportationEN6.9 MB01 Jun 201300_00
Product Selection Guide
TitleSizeDateVersion
Automotive Power Selection GuideEN10.6 MB19 Jan 201601_01
Material Content SheetInfo
TitleSizeDateVersion
MCDS_2013-08-29_12-03-28_MA000940700_PG-TDSON-8-4.pdf23 KB31 Oct 201301_00
Simulation Models
TitleSizeDateVersion
OptiMOS-T2_100V_PSpiceEN68 KB28 Apr 201501_00
Package Data
TitleSizeDateVersion
PG-TDSON-8-4 | IPG20N10S4L35ATMA1EN584 KB11 Apr 201601_00
EN IPG20N10S4L-35
EN IPP80P03P4-05
Repetitive Avalanche of Automotive MOSFETs IPP80P03P4-05
EN power-stage-3x3-and-5x6
EN TLE8203E
MCDS_2013-08-29_12-03-28_MA000940700_PG-TDSON-8-4.pdf IPG20N10S4L-35
EN IPP120N10S4-05
EN IPG20N10S4L-35