IPI100P03P3L-04

ParametricIPI100P03P3L-04
RDS (on) (@10V)  max4.3mΩ
RDS (on)  max4.3mΩ
RDS (on) (@4.5V)  max7.6mΩ
QG150.0nC
VDS  max-30.0V
ID  max-100.0A
RthJC  max0.65K/W
Ptot  max200.0W
IDpuls  max-400.0A
VGS(th)  min  max-1.0V  -2.0V
Summary of Features:
  • P-channel - Logic Level - Enhancement mode
  • Automotive AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green package (RoHS Compliant)
  • Ultra low Rds(on)
  • 100% Avalanche tested
  • Intended for reverse battery protection
Benefits:
  • No charge pump required for high side drive
  • Simple interface drive circuit
  • World's lowest RDSon at 30V
  • Highest current capability
  • Lowest switching and conduction power losses for highest thermal efficiency
  • Robust packages with superior quality and reliability
  • Standard packages TO-252, TO-263, TO-220, TO-262
Target Applications:
  • High-Side MOSFETs for motor bridges (half-bridges, H-bridges, 3-phase-motors)
  • Bridge configuration could be realized with 30V P-Channels high side device with no need of charge pump
Data Sheet
TitleSizeDateVersion
IPB 100P03P3L-04,EN191 KB25 Sep 200701_01
Product Brochure
TitleSizeDateVersion
Automotive MOSFETs Product BrochureEN3.5 MB26 May 201501_00
Application Notes
TitleSizeDateVersion
Repetitive Avalanche of Automotive MOSFETs3.7 MB03 Mar 201401_00
Application Brochure
TitleSizeDateVersion
Application Brochure - Infineon Solutions for TransportationEN6.9 MB01 Jun 201300_00
Product Selection Guide
TitleSizeDateVersion
Automotive Power Selection GuideEN10.6 MB19 Jan 201601_01
EN IPP100P03P3L-04
EN IPP80P03P4-05
Repetitive Avalanche of Automotive MOSFETs IPP80P03P4-05
EN power-stage-3x3-and-5x6
EN TLE8203E