| Parametric | IPI100P03P3L-04 |
|---|
| RDS (on)
(@10V)
max | 4.3mΩ |
|---|
| RDS (on)
max | 4.3mΩ |
|---|
| RDS (on)
(@4.5V)
max | 7.6mΩ |
|---|
| QG | 150.0nC |
|---|
| VDS
max | -30.0V |
|---|
| ID
max | -100.0A |
|---|
| RthJC
max | 0.65K/W |
|---|
| Ptot
max | 200.0W |
|---|
| IDpuls
max | -400.0A |
|---|
| VGS(th)
min
max | -1.0V
-2.0V |
|---|
| Summary of Features:- P-channel - Logic Level - Enhancement mode
- Automotive AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green package (RoHS Compliant)
- Ultra low Rds(on)
- 100% Avalanche tested
- Intended for reverse battery protection
Benefits:- No charge pump required for high side drive
- Simple interface drive circuit
- World's lowest RDSon at 30V
- Highest current capability
- Lowest switching and conduction power losses for highest thermal efficiency
- Robust packages with superior quality and reliability
- Standard packages TO-252, TO-263, TO-220, TO-262
Target Applications:- High-Side MOSFETs for motor bridges (half-bridges, H-bridges, 3-phase-motors)
- Bridge configuration could be realized with 30V P-Channels high side device with no need of charge pump
 |
