IR21531

Half Bridge Driver, LO In Phase with RT, Programmable Oscillating Frequency, 0.6us Deadtime in a 8-pin DIP package and differenct phase

ParametricIR21531
Package8-pin DIP
VCC  min  max10.0V  20.0V
Output Voltage  min  max10.0V  20.0V
Output Current (Source)250.0mA
Output Current (Sink)400.0mA
TopologyHalf-Bridge Resonant
Sales Product NameIR21531
OPNIR21531DPBF
Product Statusactive and preferred
Package NamePDIP8
Completely lead freeyes
Halogen freeno
RoHS compliantyes
Packing Size50
Packing TypeTUBE
Moisture LevelTHP
OPNIR21531PBF
Product Statusactive and preferred
Package NamePDIP8
Completely lead freeyes
Halogen freeno
RoHS compliantyes
Packing Size50
Packing TypeTUBE
Moisture LevelTHP
Benefits:
  • Integrated 600V Half-bridge gate driver
  • 15.6V zener clamp on Vcc
  • True micropower start up
  • Tighter initial deadtime control
  • Low temperature coefficient deadtime
  • Shutdown feature (1/6th Vcc) on CT pin
  • Increased undervoltage lockout Hysteresis (1V)
  • Lower power level-shifting circuit
  • Constant LO, HO pulse widths at startup
  • Lower di/dt gate driver for better noise immunity
  • Low side output in phase with RT
  • Internal 50nsec (typ.) bootstrap diode (IR21531D)
  • Excellent latch immunity on all inputs and outputs
  • ESd protection on all leads
  • Also available LEAD-FREE
Target Applications:
  • Lighting Fluorescent Ballast
  • Primary Side
Data Sheet
TitleSizeDateVersion
Data Sheet - IR21531,EN217 KB18 Jun 2001
Application Notes
TitleSizeDateVersion
HV Floating MOS Gate DriversEN425 KB27 Oct 2004
Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTsEN125 KB27 Oct 2004
Article
TitleSizeDateVersion
Low Gate Charge HEXFETS simplify Gate Drive and Lower CostEN167 KB01 Apr 2000
Using Control ICs to Generate Neg. Gate Bias for MOSFETs & IGBTsEN607 KB01 Apr 2000
EN IR21531S
EN IR21531S
EN IR21531S
EN IR21531S
EN IR21531S