IRF5802

150V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package

ParametricIRF5802
PackageTSOP-6
VDS  max150.0V
RDS (on) (@10V)  max1200.0mΩ
RDS (on)  max1200.0mΩ
PolarityN
ID (@ TA=70°C)  max0.7A
ID (@ TA=25°C)  max0.9A
Ptot  max2.0W
Ptot (@ TA=25°C)  max2.0W
QG4.5nC
RthJA  max62.5K/W
MountingSMD
Moisture Sensitivity Level1
Qgd2.4nC
Tj  max150.0°C
VGS  max30.0V
Sales Product NameIRF5802
OPNIRF5802TRPBF
Product Statusactive
Package NameTSOP6L
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size3000
Packing TypeTAPE & REEL
Moisture Level1
Benefits:
  • RoHS Compliant
  • Industry-leading quality
  • Fully Characterized Avalanche Voltage and Current
  • Low Gate-to-Drain Charge to Reduce Switching Losses
  • Fully Characterized Capacitance Including Effective Coss to Simplify Design
Target Applications:
  • DC Switches
  • Load Switch
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF5802,EN205 KB07 Aug 2005
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 Feb 201600_00
Simulation Models
TitleSizeDateVersion
Spice Model - IRF5802EN2 KB18 Jun 2001
Saber Model - IRF5802EN2 KB18 Jun 2001
EN IRF5802
EN IDV20E65D1
EN IRF5802
EN IRF5802