IRF6617

A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET package rated at 52 amperes.

ParametricIRF6617
PackageDirectFET ST
VDS  max30.0V
RDS (on)  max8.1mΩ
RDS (on) (@10V)  max8.1mΩ
RDS (on) (@4.5V)  max10.3mΩ
PolarityN
ID (@ TA=70°C)  max11.0A
ID (@ TA=25°C)  max14.0A
Ptot (@ TA=25°C)  max2.1W
Ptot  max42.0W
QG11.0nC
MountingSMD
Moisture Sensitivity Level1
Qgd4.0nC
Tj  max150.0°C
VGS  max20.0V
RthJC  max3.0K/W
Sales Product NameIRF6617
OPNIRF6617TRPBF
Product Statusactive
Package NameDIRECTFET
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size4800
Packing TypeTAPE & REEL
Moisture Level1
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF6617,EN238 KB05 May 2006
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 Feb 201600_00
Simulation Models
TitleSizeDateVersion
Spice Model - IRF6617EN2 KB19 Mar 2004
Saber Model - IRF6617EN2 KB19 Mar 2004
EN IRF6617
EN IDV20E65D1
EN IRF6617
EN IRF6617