IRF6898M

25V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 35 amperes optimized with low on resistance.

ParametricIRF6898M
PackageDirectFET MX
VDS  max25.0V
RDS (on)  max1.1mΩ
RDS (on) (@10V)  max1.1mΩ
RDS (on) (@4.5V)  max1.6mΩ
PolarityN with Schottky
ID (@ TA=70°C)  max28.0A
ID (@ TA=25°C)  max35.0A
ID (@ TC=25°C)  max213.0A
Ptot (@ TA=25°C)  max2.1W
Ptot  max78.0W
QG35.0nC
MountingSMD
Qgd10.0nC
Tj  max150.0°C
Moisture Sensitivity Level1
RthJC  max1.6K/W
VGS  max16.0V
Sales Product NameIRF6898M
OPNIRF6898MTRPBF
Product Statusactive and preferred
Package NameDIRECTFET
Completely lead freeyes
Halogen freeno
RoHS compliantyes
Packing Size4800
Packing TypeTAPE & REEL
Moisture Level1
Benefits:
  • RoHS Compliant
  • 100% Rg tested
  • Low Profile (less than 0.7 mm)
  • Dual Sided Cooling
  • Low Conduction Losses
  • Optimized for High Frequency Switching
  • Low Package Inductance
  • Integrated Monolithic Sckottky Diode
Target Applications:
  • MultiPhase SyncFET
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF6898M,EN244 KB13 May 2011
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 Feb 201600_00
Simulation Models
TitleSizeDateVersion
Spice Model - IRF6898MPBFEN2 KB13 May 2011
Saber Model - IRF6898MPBFEN2 KB13 May 2011
EN IRF6898M
EN IDV20E65D1
EN IRF6898M
EN IRF6898M