IRF7309

30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package

ParametricIRF7309
PackageSO-8
VDS  max30.0V
RDS (on) (@10V)  max50.0mΩ
RDS (on)  max50.0mΩ
RDS (on) (@4.5V)  max80.0mΩ
RDS (on) (@10V)  max100.0mΩ
RDS (on)  max100.0mΩ
RDS (on) (@4.5V)  max160.0mΩ
PolarityN+P
ID (@ TA=25°C)  max-3.0A
ID (@ TA=70°C)  max-2.4A
ID (@ TA=70°C)  max3.2A
ID (@ TA=25°C)  max4.0A
Ptot (@ TA=25°C)  max1.4W
QG16.7nC
QG16.7nC
Qgd (typ)5.3nC
RthJA  max90.0K/W
Tj  max150.0°C
VGS  max20.0V
Moisture Sensitivity Level1
Qgd (typ)6.0nC
Sales Product NameIRF7309
OPNIRF7309TRPBF
Product Statusactive
Package NameSO8
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size4000
Packing TypeTAPE & REEL
Moisture Level1
OPNIRF7309PBF
Product Statusnot for new design
Package NameSO8
Completely lead freeyes
Halogen freeno
RoHS compliantyes
Packing Size95
Packing TypeTUBE
Moisture Level1
Benefits:
  • RoHS Compliant
  • Low RDS(on)
  • Dynamic dv/dt Rating
  • Fast Switching
  • Dual N and P-Channel MOSFET
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF7309,EN2 MB27 Feb 2004
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 Feb 201600_00
Simulation Models
TitleSizeDateVersion
Spice Model - IRF7309PEN1 KB18 Jun 2001
Spice Model - IRF7309NEN2 KB18 Jun 2001
Saber Model - IRF7309PEN2 KB18 Jun 2001
Saber Model - IRF7309NEN2 KB18 Jun 2001
EN IRF7309
EN IDV20E65D1
EN IRF7309
EN IRF7309
EN IRF7309
EN IRF7309