IRF7309PBF-1

30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package

ParametricIRF7309PBF-1
PackageSO-8
VDS  max30.0V
RDS (on)  max50.0mΩ
RDS (on) (@10V)  max50.0mΩ
RDS (on) (@4.5V)  max80.0mΩ
RDS (on)  max100.0mΩ
RDS (on) (@10V)  max100.0mΩ
RDS (on) (@4.5V)  max160.0mΩ
PolarityN+P
ID (@ TA=25°C)  max-3.0A
ID (@ TA=70°C)  max-2.4A
ID (@ TA=70°C)  max3.2A
ID (@ TA=25°C)  max4.0A
Ptot (@ TA=25°C)  max1.4W
QG16.7nC
QG16.7nC
Moisture Sensitivity Level1
Qgd (typ)6.0nC
RthJA  max90.0K/W
Qgd (typ)5.3nC
Tj  max150.0°C
VGS  max20.0V
Sales Product NameIRF7309PBF-1
OPNIRF7309TRPBF-1
Product Statusactive
Package NameSO8
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size4000
Packing TypeTAPE & REEL
Moisture Level1
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF7309PBF-1,EN301 KB21 Nov 2013
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 Feb 201600_00
EN IRF7309PBF-1
EN IDV20E65D1