IRF7343Q

55V Dual N- and P- Channel HEXFET Power MOSFET in a Lead-Free SO-8 package

ParametricIRF7343Q
PackageSO-8
VDS  max55.0V
RDS (on) (@10V)  max50.0mΩ
RDS (on)  max50.0mΩ
RDS (on) (@4.5V)  max65.0mΩ
RDS (on) (@10V)  max105.0mΩ
RDS (on)  max105.0mΩ
RDS (on) (@4.5V)  max170.0mΩ
PolarityN+P
ID (@ TA=25°C)  max-3.4A
ID (@ TA=70°C)  max-2.7A
ID (@ TA=70°C)  max3.8A
ID (@ TA=25°C)  max4.7A
Ptot (@ TA=25°C)  max2.0W
QG24.0nC
QG26.0nC
Moisture Sensitivity Level1
Qgd (typ)7.0nC
RthJA  max62.5K/W
Tj  max150.0°C
VGS  max20.0V
Qgd (typ)8.4nC
Sales Product NameIRF7343Q
OPNIRF7343QTRPBF
Product Statusdiscontinued
Package NameSO8
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size4000
Packing TypeTAPE & REEL
Moisture Level1
Benefits:
  • RoHS Compliant
  • Low RDS(on)
  • Dynamic dv/dt Rating
  • Fast Switching
  • Dual N and P-Channel MOSFET
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF7343Q,EN221 KB24 Jul 2007
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 Feb 201600_00
EN IRF7343Q
EN IDV20E65D1