IRF7379

30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package

ParametricIRF7379
PackageSO-8
VDS  max30.0V
RDS (on)  max45.0mΩ
RDS (on) (@10V)  max45.0mΩ
RDS (on) (@4.5V)  max75.0mΩ
RDS (on)  max90.0mΩ
RDS (on) (@10V)  max90.0mΩ
RDS (on) (@4.5V)  max180.0mΩ
PolarityN+P
ID (@ TA=25°C)  max-4.3A
ID (@ TA=70°C)  max-3.4A
ID (@ TA=70°C)  max4.6A
ID (@ TA=25°C)  max5.8A
Ptot (@ TA=25°C)  max2.5W
QG16.7nC
QG16.7nC
Moisture Sensitivity Level1
Qgd (typ)5.3nC
Qgd (typ)6.0nC
Tj  max150.0°C
VGS  max20.0V
RthJA  max50.0K/W
Sales Product NameIRF7379
OPNIRF7379TRPBF
Product Statusactive
Package NameSO8
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size4000
Packing TypeTAPE & REEL
Moisture Level1
Benefits:
  • RoHS Compliant
  • Low RDS(on)
  • Dynamic dv/dt Rating
  • Fast Switching
  • Dual N and P-Channel MOSFET
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF7379,EN220 KB10 Nov 2004
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 Feb 201600_00
EN IRF7379
EN IDV20E65D1