IRF7389

30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package

ParametricIRF7389
PackageSO-8
VDS  max30.0V
RDS (on) (@10V)  max29.0mΩ
RDS (on)  max29.0mΩ
RDS (on) (@4.5V)  max46.0mΩ
RDS (on) (@10V)  max58.0mΩ
RDS (on)  max58.0mΩ
RDS (on) (@4.5V)  max98.0mΩ
PolarityN+P
ID (@ TA=25°C)  max-5.3A
ID (@ TA=70°C)  max-4.2A
ID (@ TA=70°C)  max5.9A
ID (@ TA=25°C)  max7.3A
Ptot (@ TA=25°C)  max2.5W
QG22.0nC
QG23.0nC
Tj  max150.0°C
Moisture Sensitivity Level1
Qgd (typ)5.9nC
Qgd (typ)6.4nC
RthJA  max50.0K/W
VGS  max20.0V
Sales Product NameIRF7389
OPNIRF7389PBF
Product Statusnot for new design
Package NameSO8
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size95
Packing TypeTUBE
Moisture Level1
OPNIRF7389TRPBF
Product Statusactive
Package NameSO8
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size4000
Packing TypeTAPE & REEL
Moisture Level1
Benefits:
  • RoHS Compliant
  • Low RDS(on)
  • Dynamic dv/dt Rating
  • Fast Switching
  • Dual N and P-Channel MOSFET
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF7389,EN259 KB10 Jul 2004
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 Feb 201600_00
EN IRF7389
EN IDV20E65D1