IRF7509

30V Dual N- and P- Channel HEXFET Power MOSFET in a Micro 8 package

ParametricIRF7509
PackageMicro8 (MO-187)
VDS  max30.0V
RDS (on) (@10V)  max110.0mΩ
RDS (on)  max110.0mΩ
RDS (on) (@4.5V)  max175.0mΩ
RDS (on) (@10V)  max200.0mΩ
RDS (on)  max200.0mΩ
RDS (on) (@4.5V)  max400.0mΩ
PolarityN+P
ID (@ TA=25°C)  max-1.7A
ID (@ TA=70°C)  max-1.4A
ID (@ TA=70°C)  max1.9A
ID (@ TA=25°C)  max2.4A
Ptot (@ TA=25°C)  max1.25W
QG7.5nC
QG7.8nC
Moisture Sensitivity Level1
Qgd (typ)2.5nC
RthJA  max100.0K/W
VGS  max20.0V
Qgd (typ)2.5nC
Tj  max150.0°C
Sales Product NameIRF7509
OPNIRF7509TRPBF
Product Statusactive
Package NameMICRO8
Completely lead freeyes
Halogen freeno
RoHS compliantyes
Packing Size4000
Packing TypeTAPE & REEL
Moisture Level1
Benefits:
  • RoHS Compliant
  • Fast Switching
  • Low Profile (less than 1.1mm)
  • Dual N and P-Channel MOSFET
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF7509,EN242 KB18 Mar 2005
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 Feb 201600_00
EN IRF7509
EN IDV20E65D1