IRF7580M

60V Single N-Channel HEXFET Power MOSFET in a DirectFET ME Package

ParametricIRF7580M
PackageDirectFET ME
VDS  max60.0V
RDS (on)  max3.6mΩ
RDS (on) (@10V)  max3.6mΩ
PolarityN
ID (@ TC=100°C)  max82.0A
ID  max82.0A
ID (@ TC=25°C)  max116.0A
Ptot  max115.0W
QG120.0nC
MountingSMD
Moisture Sensitivity Level3
Qgd36.0nC
RthJC  max1.3K/W
Tj  max175.0°C
VGS  max20.0V
Sales Product NameIRF7580M
OPNIRF7580MTRPBF
Product Statusactive and preferred
Package NameDIRECTFET
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size4800
Packing TypeTAPE & REEL
Moisture Level1
Benefits:
  • RoHS Compliant
  • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
  • Fully Characterized Capacitance and Avalanche SOA
  • Enhanced body diode dV/dt and dI/dt Capability
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF7580M,EN510 KB28 Feb 2014
Product Brief
TitleSizeDateVersion
StrongIRFET™ in Medium Can DirectFET™ PackageEN195 KB14 Oct 2015
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 Feb 201600_00
Simulation Models
TitleSizeDateVersion
Spice Model - IRF7580MEN2 KB28 Feb 2014
Saber Model - IRF7580MEN2 KB28 Feb 2014
EN IRF7580M
EN IRF7780M
EN IDV20E65D1
EN IRF7580M
EN IRF7580M