IRF9952

30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package

ParametricIRF9952
PackageSO-8
VDS  max30.0V
RDS (on) (@10V)  max100.0mΩ
RDS (on)  max100.0mΩ
RDS (on) (@4.5V)  max150.0mΩ
RDS (on) (@10V)  max250.0mΩ
RDS (on)  max250.0mΩ
RDS (on) (@4.5V)  max400.0mΩ
PolarityN+P
ID (@ TA=25°C)  max-2.3A
ID (@ TA=70°C)  max-1.8A
ID (@ TA=70°C)  max2.8A
ID (@ TA=25°C)  max3.5A
Ptot (@ TA=25°C)  max2.0W
QG6.1nC
QG6.9nC
Qgd (typ)1.1nC
Qgd (typ)1.8nC
RthJA  max62.5K/W
VGS  max20.0V
Moisture Sensitivity Level1
Tj  max150.0°C
Sales Product NameIRF9952
OPNIRF9952PBF
Product Statusdiscontinued
Package NameSO8
Completely lead freeyes
Halogen freeno
RoHS compliantyes
Packing Size95
Packing TypeTUBE
Moisture Level1
OPNIRF9952TRPBF
Product Statusactive
Package NameSO8
Completely lead freeyes
Halogen freeno
RoHS compliantyes
Packing Size4000
Packing TypeTAPE & REEL
Moisture Level1
Benefits:
  • RoHS Compliant
  • Low RDS(on)
  • Dynamic dv/dt Rating
  • Fast Switching
  • Dual N and P-Channel MOSFET
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF9952,EN224 KB10 Nov 2004
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 Feb 201600_00
EN IRF9952
EN IDV20E65D1