IRFB42N20D

200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

ParametricIRFB42N20D
PackageTO-220
VDS  max200.0V
RDS (on) (@10V)  max55.0mΩ
RDS (on)  max55.0mΩ
PolarityN
ID (@ TC=100°C)  max30.0A
ID  max30.0A
ID (@ TC=25°C)  max42.6A
Ptot  max300.0W
QG91.0nC
MountingTHT
RthJC  max0.5K/W
VGS  max30.0V
Qgd43.0nC
Tj  max175.0°C
Sales Product NameIRFB42N20D
OPNIRFB42N20DPBF
Product Statusactive
Package NameTO220
Completely lead freeyes
Halogen freeno
RoHS compliantyes
Packing Size50
Packing TypeTUBE
Moisture LevelTHP
Benefits:
  • RoHS Compliant
  • Industry-leading quality
  • Fully Characterized Avalanche Voltage and Current
  • Low Gate-to-Drain Charge to Reduce Switching Losses
  • Fully Characterized Capacitance Including Effective Coss to Simplify Design
Data Sheet
TitleSizeDateVersion
Data Sheet - IRFB42N20D,EN169 KB23 Jul 2004
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 Feb 201600_00
Simulation Models
TitleSizeDateVersion
Spice Model - IRFB42N20DEN2 KB18 Jun 2001
Saber Model - IRFB42N20DEN2 KB18 Jun 2001
EN IRFB42N20D
EN IDV20E65D1
EN IRFB42N20D
EN IRFB42N20D