IRFHM830

30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package

ParametricIRFHM830
PackagePQFN 3.3 x 3.3 B/G
RDS (on) (@10V)  max3.8mΩ
RDS (on)  max3.8mΩ
RDS (on) (@4.5V)  max6.0mΩ
PolarityN
ID (@ TA=70°C)  max17.0A
ID (@ TA=25°C)  max21.0A
ID (@ TC=25°C)  max40.0A
ID (@ TC=100°C)  max40.0A
ID  max40.0A
QG15.0nC
RthJC  max3.4K/W
MountingSMD
Qgd5.0nC
VDS  max30.0V
Ptot (@ TA=25°C)  max2.7W
VGS  max20.0V
Moisture Sensitivity Level1
Ptot  max37.0W
Tj  max150.0°C
Sales Product NameIRFHM830
OPNIRFHM830TRPBF
Product Statusactive
Package NamePQFN 3.3X3.3 8L
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size4000
Packing TypeTAPE & REEL
Moisture Level1
Benefits:
  • RoHS Compliant
  • Low Profile (less than 1.0 mm)
  • Industry-Standard Pinout
  • Compatible with Existing Surface Mount Techniques
  • Qualified Industrial
  • Qualified MSL1
Target Applications:
  • Battery Protection
  • Isolated Primary Side MOSFETs
  • Isolated Secondary Side SyncRec MOSFETs
  • Load Switch High Side
  • Load Switch Low Side
  • Point of Load ControlFET
Data Sheet
TitleSizeDateVersion
Data Sheet - IRFHM830,EN532 KB23 Jul 2010
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 Feb 201600_00
Simulation Models
TitleSizeDateVersion
Spice Model - IRFHM830PBFEN2 KB23 Jul 2010
Saber Model - IRFHM830PBFEN2 KB23 Jul 2010
EN IRFHM830
EN IDV20E65D1
EN IRFHM830
EN IRFHM830