IRL6372

30V Dual N-Channel Low Logic Level HEXFET Power MOSFET in a SO-8 Lead-Free package

ParametricIRL6372
PackageSO-8
RDS (on) (@4.5V)  max17.9mΩ
RDS (on) (@2.5V)  max23.0mΩ
PolarityN+N
PolarityN+N
ID (@ TA=70°C)  max6.5A
ID (@ TA=70°C)  max6.5A
ID (@ TA=25°C)  max8.1A
ID (@ TA=25°C)  max8.1A
QG11.0nC
RthJA  max62.5K/W
VGS  max12.0V
Qgd (typ)4.8nC
Tj  max150.0°C
VDS  max30.0V
Moisture Sensitivity Level1
Ptot (@ TA=25°C)  max2.0W
Sales Product NameIRL6372
OPNIRL6372PBF
Product Statusdiscontinued
Package NameSO8
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size95
Packing TypeTUBE
Moisture Level1
OPNIRL6372TRPBF
Product Statusactive and preferred
Package NameSO8
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size4000
Packing TypeTAPE & REEL
Moisture Level1
Benefits:
  • RoHS Compliant
  • Compatible with Existing Surface Mount Techniques
  • Qualified MSL1
  • Dual N-Channel MOSFET
Target Applications:
  • Battery Protection
Data Sheet
TitleSizeDateVersion
Data Sheet - IRL6372,EN273 KB20 Jan 2011
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 Feb 201600_00
EN IRL6372
EN IDV20E65D1