IRS2112

High and Low Side Driver, Shutdown Input

ParametricIRS2112
TopologyHigh Side and Low Side
Voltage Class600.0V
Output Current (Source)290.0mA
Output Current (Sink)600.0mA
Channels2.0
Moisture Sensitivity Level3
QualificationIndustrial
TechnologyHVIC
UVLOVcc / Vbs
VBSUV+ / VCCUV+    (min)  (max)8.6V  (7.6V)  (9.6V)
VBSUV- / VCCUV-    (min)  (max)8.2V  (7.2V)  (9.2V)
toff130.0ns
ton135.0ns
Separate Power and Logic GroundYes
Shutdown/EnableYes
Sales Product NameIRS2112
OPNIRS2112PBF
Product Statusactive and preferred
Package NamePDIP14
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size25
Packing TypeTUBE
Moisture LevelTHP
OPNIRS2112SPBF
Product Statusactive and preferred
Package NameSOIC 16W
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size45
Packing TypeTUBE
Moisture Level3
OPNIRS2112STRPBF
Product Statusactive and preferred
Package NameSOIC 16W
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size1000
Packing TypeTAPE & REEL
Moisture Level3
Benefits:
  • Floating channel designed for bootstrap operation
  • Fully operational to +600 V
  • Tolerant to negative transient voltage, dV/dt immune
  • Gate drive supply range from 10 V to 20 V
  • Undervoltage lockout for both channels
  • 3.3 V logic compatible
  • Separate logic supply range from 3.3 V to 20 V
  • Logic and power ground +/- 5 V offset
  • CMOS Schmitt-triggered inputs with pull-down
  • Cycle by cycle edge-triggered shutdown logic
  • Matched propagation delay for both channels
  • Outputs in phase with inputs
  • RoHS compliant
Target Applications:
  • Air Conditioner
  • Dishwasher
  • Dryer
  • Fan
  • Induction Cooker
  • Pump
  • Refridgeration
  • Solar
  • UPS
  • Washing Machine
  • Welding
Diagrams
Data Sheet
TitleSizeDateVersion
Data Sheet - IRS2112,EN1.8 MB21 Jul 2006
Application Notes
TitleSizeDateVersion
Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTsEN125 KB27 Oct 2004
HV Floating MOS Gate DriversEN425 KB27 Oct 2004
Article
TitleSizeDateVersion
Low Gate Charge HEXFETS simplify Gate Drive and Lower CostEN167 KB01 Apr 2000
Using Control ICs to Generate Neg. Gate Bias for MOSFETs & IGBTsEN607 KB01 Apr 2000
Product Catalogue
TitleSizeDateVersion
Short Form Catalog - May 2016EN4.4 MB09 May 201601_00
EN IRS2112
EN IR21531S
EN IR21531S
EN IR21531S
EN IR21531S
EN IDV20E65D1