PTFB181702FC V1

High Power RF LDMOS FET, 170 W, 28V, 1805 – 1880 MHz

ParametricPTFB181702FC V1
Flange TypeEarless
MatchingI/O
Frequency Band  min  max1805.0MHz  1880.0MHz
P1dB170.0W
Supply Voltage28.0V
Pout30.0W
Gain19.0dB
Test SignalWCDMA
Sales Product NamePTFB181702FC V1
OPNPTFB181702FCV1XWSA1
Product Statusdiscontinued
Package NameH-37248-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeBLISTER TRAY
OPNPTFB181702FCV1R0XTMA1
Product Statusactive and preferred
Package NameH-37248-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTAPE & REEL
Summary of Features:
  • Broadband input and output matching
  • Typical CW performance at 1842 MHz, 28 V - Output power at P1dB = 180 W - Efficiency = 58% - Gain = 18.5 dB
  • Capable of handling 10:1 VSWR @ 28 V, 170 W (CW) output power
  • Integrated ESD protection
  • Low thermal resistance
  • Pb-free and RoHS compliant
  • Package: H-37248-4, earless
Data Sheet
TitleSizeDateVersion
PTFB181702FC,EN673 KB15 Oct 201202_01
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 May 201505_00
Package Data
TitleSizeDateVersion
H-37248-4-1 | PTFB181702FCV1XWSA1EN344 KB11 Apr 201601_00
Development Tools
TitleSizeDateVersion
PTFB181702FC RD183 KB18 Oct 201202_01
EN PTFB181702FC+V1
EN where-to-buy
EN PTFB181702FC+V1
PTFB181702FC RD PTFB181702FC+V1