PTFB183404E V1

High Power RF LDMOS FETs, 340 W, 30 V, 1805 – 1880 MHz

ParametricPTFB183404E V1
Flange TypeBolt Down
MatchingI/O
Frequency Band  min  max1805.0MHz  1880.0MHz
P1dB340.0W
Supply Voltage30.0V
Pout80.0W
Gain17.0dB
Test SignalWCDMA
Sales Product NamePTFB183404E V1
OPNPTFB183404EV1R0XTMA1
Product Statusactive and preferred
Package NameH-36275-8
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTAPE & REEL
OPNPTFB183404EV1XWSA1
Product Statusdiscontinued
Package NameH-36275-8
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size35
Packing TypeBLISTER TRAY
Summary of Features:
  • Broadband input and output matching
  • Wide video bandwidth
  • Typical single-carrier WCDMA performance at 1880 MHz, 30 V - Output power = 125 W - Efficiency = 31% - Gain = 17 dB,PAR = 5.5 dB @ 0.01% CCDF probability - ACPR @ 5 MHz= -37 dBc
  • Increased negative gate-source voltage range for improved performance in Doherty amplifiers
  • Capable of handling 10:1 VSWR @ 30 V, 340 W (CW) output power
  • Integrated ESD protection
  • Excellent thermal stability
  • Pb-free and RoHS compliant
  • Package: H-36275-8, bolt-down
Data Sheet
TitleSizeDateVersion
PTFB183404EF,EN685 KB07 Nov 201004_01
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 May 201505_00
Package Data
TitleSizeDateVersion
H-36275-8-1 | PTFB183404EV1XWSA1EN345 KB11 Apr 201601_00
Development Tools
TitleSizeDateVersion
PTFB183404F RD130 KB28 Jul 201002_01
EN PTFB183404E+V1
EN where-to-buy
EN PTFB183404E+V1
PTFB183404F RD PTFB183404E+V1