PTFB192557SH V1

High Power RF LDMOS FET, 255 W, 28 V, 1930 – 1990 MHz

ParametricPTFB192557SH V1
Flange TypeSurface Mount
MatchingI/O
Frequency Band  min  max1930.0MHz  1990.0MHz
P1dB255.0W
Supply Voltage28.0V
Pout60.0W
Gain19.0dB
Test SignalWCDMA
Sales Product NamePTFB192557SH V1
OPNPTFB192557SHV1XWSA1
Product Statusdiscontinued
Package NameH-34288G-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size35
Packing TypeBLISTER TRAY
Summary of Features:
  • Broadband input and output matching
  • Optimized for use as peak side in Doherty amplifiers
  • Typical CW pulsed performance, 1990 MHz, 28 V - Output power at P1dB = 250 W - Efficiency = 55% - Gain = 18.6 dB
  • Capable of handling 10:1 VSWR @ 28 V, 250 W (CW) output power
  • Integrated ESD protection
  • Low thermal resistance
  • Pb-free and RoHS compliant
  • Package: H-34288G-4/2, gull wing, surface mount
Data Sheet
TitleSizeDateVersion
PTFB 192557SH DS,EN601 KB08 Jun 201604_00
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 May 201505_00
Reference Design
TitleSizeDateVersion
PTFB 192557SH RD285 KB08 Dec 201201_00
Package Data
TitleSizeDateVersion
H-34288G-4/2-1 | PTFB192557SHV1XWSA1EN344 KB11 Apr 201601_00
EN PTFB192557SH+V1
EN where-to-buy
PTFB 192557SH RD PTFB192557SH+V1
EN PTFB192557SH+V1