PTFB193404F V1

High Power RF LDMOS FET, 340 W, 30 V, 1930 – 1990 MHz

ParametricPTFB193404F V1
Flange TypeEarless
MatchingI/O
Frequency Band  min  max1930.0MHz  1990.0MHz
P1dB340.0W
Supply Voltage30.0V
Pout80.0W
Gain19.0dB
Test SignalWCDMA
Sales Product NamePTFB193404F V1
OPNPTFB193404FV1XWSA1
Product Statusdiscontinued
Package NameH-37275-6
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size35
Packing TypeBLISTER TRAY
OPNPTFB193404FV1R0XTMA1
Product Statusactive and preferred
Package NameH-37275-6
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTAPE & REEL
Summary of Features:
  • Broadband input and output matching
  • Wide video bandwidth
  • Typical single-carrier WCDMA performance at 1990 MHz, 30 V - Output power = 100 W - Efficiency = 33% - Gain = 19 dB   - PAR = 7.5 dB @ 0.01% CCDF - ACPR @ 5 MHz = -35 dBc
  • Increased negative gate-source voltage range for improved performance in Doherty amplifiers
  • Capable of handling 10:1 VSWR @ 30 V, 340 W (CW) output power
  • Integrated ESD protection
  • Excellent thermal stability
  • Pb-free and RoHS compliant
  • Package: H-37275-6/2, earless
Data Sheet
TitleSizeDateVersion
PTFB 193404F V1,EN520 KB13 May 201105_02
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 May 201505_00
Package Data
TitleSizeDateVersion
H-37275-6/2-1 | PTFB193404FV1XWSA1EN344 KB11 Apr 201601_00
Development Tools
TitleSizeDateVersion
PTFB193404F RD278 KB30 Nov 201001_01
EN PTFB193404F+V1
EN where-to-buy
EN PTFB193404F+V1
PTFB193404F RD PTFB193404F+V1