PTFB210801FA V1

High Power RF LDMOS FET, 80 W, 28 V, 2110 – 2170 MHz

ParametricPTFB210801FA V1
Flange TypeEarless
MatchingI/O
Frequency Band  min  max2110.0MHz  2170.0MHz
P1dB80.0W
Supply Voltage28.0V
Pout25.0W
Gain18.5dB
Test SignalWCDMA
Sales Product NamePTFB210801FA V1
OPNPTFB210801FAV1XWSA1
Product Statusdiscontinued
Package NameH-37265-2
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size80
Packing TypeBLISTER TRAY
OPNPTFB210801FAV1R0XTMA1
Product Statusactive and preferred
Package NameH-37265-2
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTAPE & REEL
Summary of Features:
  • Broadband internal matching
  • Typical single-carrier WCDMA performance at 2170 MHz, 28 V - Average output power = 25 W - Linear Gain = 18.5 dB - Efficiency = 32.5% - Adjacent channel power = –37 dBc
  • Typical CW performance, 2170 MHz, 28 V, - Output power at P1dB = 80 W - Efficiency = 55%
  • Integrated ESD protection
  • Capable of handling 10:1 VSWR @ 28 V, 80 W (CW) output power
  • Pb-free and RoHS compliant
  • Package: H-37265-2, earless
Data Sheet
TitleSizeDateVersion
PTFB210801FA DS,EN620 KB24 Jun 201101_01
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 May 201505_00
Reference Design
TitleSizeDateVersion
PTFB210801FA RD214 KB13 Jul 201101_00
Package Data
TitleSizeDateVersion
H-37265-2-1 | PTFB210801FAV1XWSA1EN344 KB11 Apr 201601_00
EN PTFB210801FA+V1
EN where-to-buy
PTFB210801FA RD PTFB210801FA+V1
EN PTFB210801FA+V1