PTFB213004F V2

High Power RF LDMOS FET, 300 W, 30 V, 2110 – 2170 MHz

ParametricPTFB213004F V2
Flange TypeEarless
MatchingI/O
Frequency Band  min  max2110.0MHz  2170.0MHz
P1dB300.0W
Supply Voltage30.0V
Pout60.0W
Gain18.0dB
Test SignalWCDMA
Sales Product NamePTFB213004F V2
OPNPTFB213004FV2R0XTMA1
Product Statusactive and preferred
Package NameH-37275-6
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTAPE & REEL
OPNPTFB213004FV2XWSA1
Product Statusdiscontinued
Package NameH-37275-6
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size35
Packing TypeBLISTER TRAY
Summary of Features:
  • Broadband internal matching
  • Enhanced for use in DPD error correction systems
  • Wide video bandwidth
  • Typical single-carrier WCDMA performance at 2170 MHz, 30 V, - POUT = 49.5 dBm Avg - Gain = 17.5 dB - Efficiency = 30%
  • Increased negative gate-source voltage range for improved performance in Doherty amplifiers
  • Capable of handling 10:1 VSWR @ 30 V, 300 W (CW) output power
  • Excellent thermal stability
  • Integrated ESD protection
  • Pb-free and RoHS-compliant
  • Package: H-37275-6/2, earless
Data Sheet
TitleSizeDateVersion
PTFB 213004F,EN509 KB10 Aug 201005_03
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 May 201505_00
Package Data
TitleSizeDateVersion
H-37275-6/2-1 | PTFB213004FV2XWSA1EN344 KB11 Apr 201601_00
Development Tools
TitleSizeDateVersion
PTFB213004F RD127 KB05 Aug 201002_01
EN PTFB213004F+V2
EN where-to-buy
EN PTFB213004F+V2
PTFB213004F RD PTFB213004F+V2