PTFC262808SV V1 R250

High Power RF LDMOS FET, 280 W, 28 V, 2620 – 2690 MHz

ParametricPTFC262808SV V1 R250
Flange TypeSurface Mount
MatchingI/O
Frequency Band  min  max2620.0MHz  2690.0MHz
P1dB280.0W
Supply Voltage28.0V
Pout56.0W
Gain19.5dB
Test SignalWCDMA
Sales Product NamePTFC262808SV V1 R250
OPNPTFC262808SVV1R250XTMA1
Product Statusactive and preferred
Package NameH-37275G-6
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size250
Packing TypeTAPE & REEL
Summary of Features:
  • Broadband internal matching
  • Low thermal resistance
  • Typical CW pulsed performance, 2620 MHz, 28 V - 280 W (P1dB) output power - 52% efficiency - 18 dB gain
  • Typical 1-carrier WCDMA performance, 2655 MHz, 28 V - 56 W avg. output power - 24% efficiency - 18.0 dB
  • RoHS-compliant
  • Integrated ESD protection: Human Body Model, Class 1C (per JESD22-A114)
  • Capable of handling 10:1 VSWR at 28 V, 280 W (CW) output power RF
Data Sheet
TitleSizeDateVersion
PTFC 262808SV Data Sheet,EN172 KB02 Aug 201202_01
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 May 201505_00
Package Data
TitleSizeDateVersion
H-37275G-6/2-1 | PTFC262808SVV1R250XTMA1EN344 KB11 Apr 201601_00
Development Tools
TitleSizeDateVersion
PTFC 262808SV RD157 KB04 Jan 201201_00
EN PTFC262808SV+V1+R250
EN where-to-buy
EN PTFC262808SV+V1+R250
PTFC 262808SV RD PTFC262808SV+V1+R250