PXAC182908FV V1 R0

High Power RF LDMOS FET, 240W, 28V, 1805-1880MHz

ParametricPXAC182908FV V1 R0
Flange TypeEarless
MatchingI/O
Frequency Band  min  max1805.0MHz  1880.0MHz
P1dB240.0W
Supply Voltage28.0V
Pout70.0W
Gain15.0dB
Test SignalWCDMA
Sales Product NamePXAC182908FV V1 R0
OPNPXAC182908FVV1R0XTMA1
Product Statusactive and preferred
Package NameH-37275G-6
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTAPE & REEL
Summary of Features:
  • Broadband internal input and output matching
  • Asymmetrical Doherty design - Main : P1dB = 120 W Typ - Peak : P1dB = 220 W Typ
  • Typical Pulsed CW performance, 1842.5 MHz, 28 V, combined outputs - Output power at P1dB = 240 W - Efficiency = 52.6% - Gain = 14.5 dB
  • Capable of handling 10:1 VSWR @28 V, 240 W (CW) output power
  • Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001)
  • Integrated ESD protection
  • Low thermal resistance
  • Pb-free and RoHS compliant
Data Sheet
TitleSizeDateVersion
PXAC182908FV DS,EN630 KB29 Jul 201502_01
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 May 201505_00
Reference Design
TitleSizeDateVersion
PXAC182908FV RDEN92 KB21 Jul 201502_00
Package Data
TitleSizeDateVersion
H-37275G-6/2-1 | PXAC182908FVV1R0XTMA1EN344 KB11 Apr 201601_00
EN PXAC182908FV+V1+R0
EN where-to-buy
EN PXAC182908FV+V1+R0
EN PXAC182908FV+V1+R0