PXAC201602FC V1

High Power RF LDMOS FET, 140 W, 28 V, 1880 – 1920 MHz, 2010 – 2025 MHz

Asymmetric and dual-path design make it ideal for Doherty amplifier designs

ParametricPXAC201602FC V1
Flange TypeEarless
MatchingI/O
Frequency Band  min  max1880.0MHz  1920.0MHz
P1dB140.0W
Supply Voltage28.0V
Pout22.4W
Gain17.7dB
Test SignalWCDMA
Sales Product NamePXAC201602FC V1
OPNPXAC201602FCV1XWSA1
Product Statusactive and preferred
Package NameH-37248-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeBLISTER TRAY
OPNPXAC201602FCV1R0XTMA1
Product Statusactive and preferred
Package NameH-37248-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTAPE & REEL
Summary of Features:
  • Asymmetric Doherty design - Main: 55 W Typ (P1dB) - Peak: 85 W Typ (P1dB)
  • Broadband internal matching
  • Pulsed CW performance, 1960 MHz, 28 V - Output power at P1dB = 100 W - Gain = 18 dB - Efficiency = 55%
  • 1-carrier WCDMA performance, 1900 MHz, 28 V - Average output power = 43.5 dBm - Gain = 18.5 dB - Efficiency = 49%
  • Capable of handling 10:1 VSWR @ 28 V, 140 W (CW) output power
  • Integrated ESD protection, Human Body Model Class 1C (per JESD22-A114)
  • Low thermal resistance
  • Pb-free and RoHS compliant
Data Sheet
TitleSizeDateVersion
PXAC201602FC DS,EN167 KB14 Mar 201402_00
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 May 201505_00
Package Data
TitleSizeDateVersion
H-37248-4-1 | PXAC201602FCV1XWSA1EN344 KB11 Apr 201601_00
Development Tools
TitleSizeDateVersion
Reference Design files for PXAC 261212FC253 KB11 Apr 201401_00
EN PXAC201602FC+V1
EN where-to-buy
EN PXAC201602FC+V1
Reference Design files for PXAC 261212FC PXAC261212FC+V1