PXAC243502FV V1

High Power RF LDMOS FET, 350W, 28V, 2300 – 2400 MHz

ParametricPXAC243502FV V1
Flange TypeEarless
MatchingI/O
Frequency Band  min  max2300.0MHz  2400.0MHz
P1dB350.0W
Supply Voltage28.0V
Pout68.0W
Gain15.5dB
Test SignalWCDMA
Sales Product NamePXAC243502FV V1
OPNPXAC243502FVV1R0XTMA1
Product Statusactive and preferred
Package NameH-37275-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTAPE & REEL
OPNPXAC243502FVV1XWSA1
Product Statusactive and preferred
Package NameH-37275-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size35
Packing TypeBLISTER TRAY
Summary of Features:
  • Asymmetric design - Main: 150W P1dB - Peak: 200W P1dB
  • Broadband internal matching
  • CW performance at 2350MHz, 28V - Ouput power = 250W P1dB - Efficiency = 46% - Gain = 16dB
  • Integrated ESD protection
  • Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001)
  • Low thermal resistance
  • Pb-free and RoHS-compliant
Data Sheet
TitleSizeDateVersion
Infineon-PXAC243502FV V1-DS-v03_01-EN,EN714 KB16 Jan 201503_01
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 May 201505_00
Reference Design
TitleSizeDateVersion
PXAC243502FV RDEN623 KB10 Mar 201501_00
Package Data
TitleSizeDateVersion
H-37275-4-1 | PXAC243502FVV1XWSA1EN342 KB11 Apr 201601_00
EN PXAC243502FV+V1
EN where-to-buy
EN PXAC243502FV+V1
EN PXAC243502FV+V1