PXFC192207SH V1 R250

High Power RF LDMOS FET, 220W, 28V, 1805-1990MHz

ParametricPXFC192207SH V1 R250
Flange TypeEarless
MatchingI/O
Frequency Band  min  max1805.0MHz  1990.0MHz
P1dB220.0W
Supply Voltage28.0V
Pout50.0W
Gain20.0dB
Test SignalWCDMA
Sales Product NamePXFC192207SH V1 R250
OPNPXFC192207SHV1R250XTMA1
Product Statusactive and preferred
Package NameH-37288G-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size250
Packing TypeTAPE & REEL
Summary of Features:
  • Broadband internal input and output matching
  • Typical Pulsed CW performance, 1880 MHz, 28 V, 10 μs pulse width, 10% duty cycle, class AB - Output power at P1dB = 220 W - Efficiency = 55% - Gain = 20 dB
  • Typical single-carrier WCDMA performance, 1880 MHz, 28 V, 10 dB PAR @ 0.01% CCDF - Output power = 50 W - Efficiency = 29% - Gain = 20 dB - ACPR = –34 dBc @5 MHz
  • Capable of handling 10:1 VSWR @28 V, 200 W (CW) output power
  • Integrated ESD protection
  • Low thermal resistance
  • Pb-free and RoHS compliant
Data Sheet
TitleSizeDateVersion
Infineon-PXFC192207SH V1 R250-DS-v02_00-EN,EN604 KB31 Oct 201402_00
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 May 201505_00
Reference Design
TitleSizeDateVersion
PXFC192207SH RDEN408 KB13 Jan 201501_00
Package Data
TitleSizeDateVersion
H-37288G-4/2-1 | PXFC192207SHV1R250XTMA1EN344 KB11 Apr 201601_00
EN PXFC192207SH+V1+R250
EN where-to-buy
EN PXFC192207SH+V1+R250
EN PXFC192207SH+V1+R250