SIDC30D120E6
Emitter Controlled-Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled-Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled-Diode is optimized for Infineon IGBT technology.
| Parametric | SIDC30D120E6 |
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| Technology | Emitter Controlled Diode |
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| VDS
max | 1200.0V |
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| IF
max | 35.0A |
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| I(FSM)
max | 70.0A |
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| VF | 1.9V |
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| IR
max | 250.0µA |
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| Irrm | 36.8A |
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| Sales Product Name | SIDC30D120E6 |
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| OPN | SIDC30D120E6X1SA2 |
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| Product Status | not for new design |
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| Package Name | -- |
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| Completely lead free | yes |
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| Halogen free | yes |
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| RoHS compliant | yes |
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| Packing Size | 1 |
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| Packing Type | WAFER SAWN |
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| |
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| Summary of Features:- Soft, fast switching
- Low reverse recovery charge
- Small temperature coefficient
Target Applications:- SMPS
- Industrial drives
- Resonant applications
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Data Sheet
