SIDC30D120E6

Emitter Controlled-Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled-Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled-Diode is optimized for Infineon IGBT technology.

ParametricSIDC30D120E6
TechnologyEmitter Controlled Diode
VDS  max1200.0V
IF  max35.0A
I(FSM)  max70.0A
VF1.9V
IR  max250.0µA
Irrm36.8A
Sales Product NameSIDC30D120E6
OPNSIDC30D120E6X1SA2
Product Statusnot for new design
Package Name--
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size1
Packing TypeWAFER SAWN
Summary of Features:
  • Soft, fast switching
  • Low reverse recovery charge
  • Small temperature coefficient
Target Applications:
  • SMPS
  • Industrial drives
  • Resonant applications
Data Sheet
TitleSizeDateVersion
SIDC30D120E6,EN207 KB24 Jul 200701_00
EN SIDC30D120E6